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BSP308

Infineon Technologies
Part Number BSP308
Manufacturer Infineon Technologies
Description Sipmos(r) Small-signal-transistor
Published Jan 6, 2006
Detailed Description w at • N-Channel .D w • Enhancement mode w • Logic Level Features • dv/dt rated SIPMOS ® Small-Signal-Transistor Produ...
Datasheet PDF File BSP308 PDF File

BSP308
BSP308

Overview
w at • N-Channel .
D w • Enhancement mode w • Logic Level Features • dv/dt rated SIPMOS ® Small-Signal-Transistor Product Summary Drain source voltage Continuous drain current h S a ee U 4 t m o .
c Preliminary data BSP308 VDS ID 4 30 0.
05 4.
7 V Ω A Drain-Source on-state resistance RDS(on) Type BSP308 Package SOT-223 Ordering Code Q67000-S4011 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current T A = 25 °C T A = 70 °C Pulsed drain current T A = 25 °C Reverse diode dv/dt I S = 4.
7 A, V DS = 20 V, di/dt = 200 A/µs, T jmax = 150 °C Gate source voltage Power dissipation w w w t a .
D S a e h ID U 4 t e .
c G m o 2 1 3 VPS05163 Pin 1 Pin 2/4 D PIN 3 S Value 4.
7 3.
9 Unit A ID puls dv/dt 18.
8 6 kV/µs VGS Ptot Tj , Tstg ±20 1.
8 -55.
.
.
+150 55/150/56 V T A = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 w w w .
D a S a t e e h m o c .
°C U 4 t W 1999-09-22 Prelimina...


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