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BSP30

Diotec Semiconductor
Part Number BSP30
Manufacturer Diotec Semiconductor
Description Surface mount Si-Epitaxial PlanarTransistors
Published Mar 23, 2005
Detailed Description BSP 30 ... BSP 33 PNP Switching Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransi...
Datasheet PDF File BSP30 PDF File

BSP30
BSP30

Overview
BSP 30 .
.
.
BSP 33 PNP Switching Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 1.
65 4 ±0.
2 ±0.
3 6.
5 ±0.
1 3 ±0.
2 1.
3 W SOT-223 0.
04 g Plastic case Kunststoffgehäuse 3.
5 Weight approx.
– Gewicht ca.
Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1 0.
7 2.
3 2 3 3.
25 Dimensions / Maße in mm 1 = B 2, 4 = C 3 = E Maximum ratings (TA = 25/C) 7 Grenzwerte (TA = 25/C) BSP 30 BSP 31 BSP 32 BSP 33 80 V 90 V 5V 1.
3 W 1) 1A 2A 200 mA 150/C - 65…+ 150/C Kennwerte (Tj = 25/C) Min.
Typ.
– – – – – Max.
100 nA 50 :A 100 nA 250 mV 500 mV Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC - ICM - IBM Tj TS 60 V 70 V Peak Collector current – Koll.
-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temp.
– Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics (Tj = 25/C) Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 60 V IE = 0, - VCB = 60 V, Tj = 150/C Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 5 V - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA - IEB0 - VCEsat - VCEsat – – – Collector saturation volt.
– Kollektor-Sättigungsspg.
2) - ICB0 - ICB0 – – 1 ) Mounted on P.
C.
board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 2 01.
11.
2003 Switching Transistors Characteristics (Tj = 25/C) Min.
Base saturation voltage – Basis-Sättigungsspannung 1) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA - VCE = 5 V, - IC = 100 :A - VCE = 5 V, - IC = 100...


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