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BFR949F

Infineon Technologies AG
Part Number BFR949F
Manufacturer Infineon Technologies AG
Description NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector current...
Datasheet PDF File BFR949F PDF File

BFR949F
BFR949F

Overview
BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 9 GHz 3 1 2 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR949F Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS  93°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) Marking RKs Pin Configuration 1=B 2=E Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS 3=C Package TSFP-3 Unit V Value 10 20 20 1.
5 35 4 250 150 -65 .
.
.
150 -65 .
.
.
150 mA mW °C Value 225 Unit K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jan-04-2002 BFR949F Electrical Characteri...


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