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BFR949T

Infineon Technologies AG
Part Number BFR949T
Manufacturer Infineon Technologies AG
Description NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BFR949T NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to...
Datasheet PDF File BFR949T PDF File

BFR949T
BFR949T

Overview
BFR949T NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA  f T = 9 GHz F = 1.
0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Maximum Ratings Parameter Marking RKs 1=B Pin Configuration 2=E 3=C Package SC75 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 10 20 20 1.
5 70 7 250 150 -65 .
.
.
150 -65 .
.
.
150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS  75°C 1) Junction temperature Ambient temperature Storage temperature mA mW °C Thermal Resistance Junction - soldering point 2) RthJS  300 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Oct-24-2001 BFR949T Electrical Characteristics at TA = 25°C, unless oth...


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