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BFR949L3

Infineon Technologies AG
Part Number BFR949L3
Manufacturer Infineon Technologies AG
Description NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BFR949L3 NPN Silicon RF Transistor Preliminary data  For low noise, high-gain broadband amplifiers at collector curren...
Datasheet PDF File BFR949L3 PDF File

BFR949L3
BFR949L3

Overview
BFR949L3 NPN Silicon RF Transistor Preliminary data  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 9 GHz F = 1.
0 dB at 1 GHz 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR949L3 Maximum Ratings Parameter Marking RK 1=B Pin Configuration 2=E 3=C Package TSLP-3-1 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 10 20 20 1.
5 35 4 250 150 -65 .
.
.
150 -65 .
.
.
150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS  100°C 1) Junction temperature Ambient temperature Storage temperature mA mW °C Thermal Resistance Junction - soldering point 2) RthJS  tbd K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-09-2001 BFR949L3 Electrical Characteristics at TA = 25...


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