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BGA2712

NXP
Part Number BGA2712
Manufacturer NXP
Description MMIC wideband amplifier
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2712 MMIC wideband amplifier Product specification Superse...
Datasheet PDF File BGA2712 PDF File

BGA2712
BGA2712


Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2712 MMIC wideband amplifier Product specification Supersedes data of 2002 Jan 31 2002 Sep 10 Philips Semiconductors Product specification MMIC wideband amplifier FEATURES • Internally matched to 50 Ω • Wide frequency range (3.
2 GHz at 3 dB bandwidth) • Flat 21 dB gain (DC to 2.
6 GHz at 1 dB flatness) • 5 dBm saturated output power at 1 GHz • Good linearity (11 dBm IP3(out) at 1 GHz) • Unconditionally stable (K > 1.
5).
APPLICATIONS • LNB IF amplifiers • Cable systems • ISM • General purpose.
DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
QUICK REFERENCE DATA SYMBOL VS IS s212 NF PL(sat) PARAMETER DC supply voltage DC supply current insertion power gain noise figure saturated load power f = 1 GHz f = 1 GHz f = 1 GHz CONDITIONS 5 12.
3 21.
3 3.
9 4.
8 TYP.
6 − − − − 1 Top view Marking code: E2-.
6 BGA2712 PINNING PIN 1 2, 5 3 4 6 VS GND2 RF out GND1 RF in DESCRIPTION 6 5 4 1 3 2 3 MAM455 4 2, 5 Fig.
1 Simplified outline (SOT363) and symbol.
MAX.
UNIT V mA dB dB dBm LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL VS IS Ptot Tstg Tj PD PARAMETER DC supply voltage supply current total power dissipation storage temperature operating junction temperature maximum drive power CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
For further information, refer to Philips specs.
: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
Ts ≤ 90 °C CONDITIONS RF input AC coupled − − − −65 − − MIN.
6 35 200 +150 150 10 MAX.
UNIT V mA mW °C °C dBm 2002 Sep 10 2 Philips Semiconductors Product specification MMIC wideband amplifier THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to solder point CONDITIONS Ptot = 200 mW; Ts ≤ 90 °C BGA2712 VALUE 300 UNIT K/W ...



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