DatasheetsPDF.com

BGA2776

Part Number	BGA2776
Manufacturer	NXP
Description	MMIC wideband amplifier
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2776 MMIC wideband amplifier Product speciﬁcation Superse...
Datasheet	BGA2776 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2776 MMIC wideband amplifier Product speciﬁcation Supersedes data of 2001 Oct 19 2002 Aug 06 Philips Semiconductors Product speciﬁcation MMIC wideband ampliﬁer FEATURES • Internally matched • Very wide frequency range • Very flat gain • High gain • High output power • Unconditionally stable.
APPLICATIONS • Cable systems • LNB IF amplifiers • General purpose • ISM.
DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
QUICK REFERENCE DATA SYMBOL VS IS s212 NF PL(sat) PARAMETER DC supply voltage DC supply current insertion power gain noise ﬁgure saturated load power f = 1 GHz f = 1 GHz f = 1 GHz CAUTION CONDITIONS 5 24.
4 23.
2 4.
9 10.
5 TYP.
6 − − − − Marking code: G4-.
BGA2776 PINNING PIN 1 2, 5 3 4 6 VS GND2 RF out GND1 RF in DESCRIPTION 6 5 4 1 6 3 1 Top view 2 3 MAM455 4 2, 5 Fig.
1 Simplified outline (SOT363) and symbol.
MAX.
UNIT V mA dB dB dBm This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
For further information, refer to Philips specs.
: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2002 Aug 06 2 Philips Semiconductors Product speciﬁcation MMIC wideband ampliﬁer LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VS IS Ptot Tstg Tj PD PARAMETER DC supply voltage supply current total power dissipation storage temperature operating junction temperature maximum drive power Ts ≤ 80 °C CONDITIONS RF input AC coupled − − − −65 − − MIN.
6 BGA2776 MAX.
34 200 +150 150 10 UNIT V mA mW °C °C dBm THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to solder point CONDITIONS Ptot = 200 mW; Ts ≤ 80 °C VALUE 300 UNIT K/W CHARACTERISTICS VS = 5 V; IS = 24.
4 mA; f = 1 GHz; Tj = 25 °C; unless otherwise speciﬁed.
SYMBOL IS s212 RL IN RL OUT N...

Similar Datasheet

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)