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BGA2717

Part Number	BGA2717
Manufacturer	NXP
Description	MMIC wideband amplifier
Published	Mar 23, 2005
Detailed Description	BGA2717 MMIC wideband ampliﬁer Rev. 02 — 24 September 2004 Product data sheet 1. Product proﬁle 1.1 General description...
Datasheet	BGA2717 PDF File

Overview

BGA2717 MMIC wideband ampliﬁer Rev.
02 — 24 September 2004 Product data sheet 1.
Product proﬁle 1.
1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband ampliﬁer with internal matching circuit in a 6-pin SOT363 SMD plastic package.
CAUTION This device is sensitive to electrostatic discharge (ESD).
Therefore care should be taken during transport and handling.
MSC895 1.
2 Features s s s s s s s s Internally matched to 50 Ω Wide frequency range (3.
2 GHz at 3 dB bandwidth) Flat 24 dB gain (±1 dB up to 2.
8 GHz) −2.
5 dBm output power at 1 dB compression point Good linearity for low current (IP3out = 10 dBm) Low second harmonic; −38 dBc at PD = −40 dBm Low noise ﬁgure; 2.
3 dB at 1 GHz Unconditionally stable (K ≥ 2).
1.
3 Applications s s s s LNB IF ampliﬁers Cable systems ISM General purpose.
1.
4 Quick reference data Table 1: Symbol VS IS s21 NF PL(sat) 2 Quick reference data Parameter DC supply voltage supply current insertion power gain noise ﬁgure saturated load power f = 1 GHz f = 1 GHz f = 1 GHz Conditions Min Typ 5 8 24 2.
3 1 Max 6 Unit V mA dB dB dBm Philips Semiconductors BGA2717 MMIC wideband ampliﬁer 2.
Pinning information Table 2: Pin 1 2, 5 3 4 6 Pinning Description VS GND2 RF_OUT GND1 RF_IN 1 2 3 SOT363 Simpliﬁed outline 6 5 4 Symbol 1 6 4 2, 5 sym052 3 3.
Ordering information Table 3: Ordering information Package Name BGA2717 Description plastic surface mounted package; 6 leads Version SOT363 Type number 4.
Marking Table 4: BGA2717 Marking Marking code 1BType number 5.
Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VS IS Ptot Tstg Tj PD Parameter DC supply voltage supply current total power dissipation storage temperature junction temperature maximum drive power Tsp ≤ 90 °C Conditions RF input AC coupled Min −65 Max 6 15 200 +150 150 −10 Unit V mA mW °C °C dBm 9397 750 13293 © Koninklijke Philips Electronics N.
V.
2004.
All rights reserved.
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