DatasheetsPDF.com

BGA2711

Part Number	BGA2711
Manufacturer	NXP
Description	MMIC wideband amplifier
Published	Aug 17, 2007
Detailed Description	www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2711 MMIC wideband amplifier Product...
Datasheet	BGA2711 PDF File

Overview

www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2711 MMIC wideband amplifier Product speciﬁcation Supersedes data of 2001 Apr 04 2001 Oct 19 www.
DataSheet4U.
com Philips Semiconductors Product speciﬁcation MMIC wideband ampliﬁer FEATURES • Internally matched to 50 Ω • Very wide frequency range • Very flat gain • Unconditionally stable.
APPLICATIONS • Cable systems • LNB IF amplifiers • General purpose • ISM.
6 BGA2711 PINNING PIN 1 2, 5 3 4 6 VS GND2 RF out GND1 RF in DESCRIPTION 6 5 4 1 3 DESCRIPTION 1 2 3 MAM455 4 2, 5 Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
Top view Marking code: G2-.
Fig.
1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA SYMBOL VS IS |s21|2 NF PL(sat) PARAMETER DC supply voltage DC supply current insertion power gain noise ﬁgure saturated load power f = 1 GHz f = 1 GHz f = 1 GHz CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
For further information, refer to Philips specs.
: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
CONDITIONS 5 12.
6 13.
1 4.
8 2.
8 TYP.
6 − − − − MAX.
UNIT V mA dB dB dBm 2001 Oct 19 2 www.
DataSheet4U.
com Philips Semiconductors Product speciﬁcation MMIC wideband ampliﬁer LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL VS IS Ptot Tstg Tj PD PARAMETER DC supply voltage supply current total power dissipation storage temperature operating junction temperature maximum drive power Ts ≤ 80 °C CONDITIONS RF input AC coupled − − − −65 − − MIN.
6 BGA2711 MAX.
20 200 +150 150 10 UNIT V mA mW °C °C dBm THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER thermal resistance from junction to solder point CONDITIONS Ptot = 200 mW; Ts ≤ 80 °C VALUE 300 UNIT K/W CHARACTERISTICS VS = 5 V; IS = 12.
6 mA; f = 1 GHz; Tj = 25 °C unless otherwise speciﬁed.
SYMBOL...

Similar Datasheet

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)