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ME60N03-G

Matsuki
Part Number ME60N03-G
Manufacturer Matsuki
Description 30V N-Channel Enhancement Mode MOSFET
Published Apr 3, 2018
Detailed Description ME60N03/ME60N03-G -g30V N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME60N03 is the N-Channel logic enhanc...
Datasheet PDF File ME60N03-G PDF File

ME60N03-G
ME60N03-G

Overview
ME60N03/ME60N03-G -g30V N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME60N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss.
FEATURES ● RDS(ON)≦8.
5mΩ@VGS=10V ● RDS(ON)≦13mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● LCD TV & Monitor Display inverter ● CCFL inverter ● Secondary Synchronous Rectification PIN CONFIGURATION (TO-252-3L) Top View * The Ordering Information: ME60N03 (Pb-free) ME60N03-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless O...


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