DatasheetsPDF.com

ME60N03

Matsuki
Part Number ME60N03
Manufacturer Matsuki
Description 30V N-Channel Enhancement Mode MOSFET
Published Jun 18, 2014
Detailed Description ME60N03 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5mΩ RDS(ON), Vgs@4.5V,Ids@20A =13mΩ ...
Datasheet PDF File ME60N03 PDF File

ME60N03
ME60N03

Overview
ME60N03 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.
5mΩ RDS(ON), Vgs@4.
5V,Ids@20A =13mΩ FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM PD TJ, Tstg EAS RθJA RθJC Limit 30 ±20 50 100 50 23 -55 to 150 110 T≦10 sec Steady State 20 15 40 Unit V V A A W ℃ mJ ℃/W ℃/W Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse(L=0.
5mH,Rg=25Ω) Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case *The device mounted on 1in2 FR4 board with 2 oz copper Apr, 2007 – Version 4.
1 01 ME60N03 30V N-Channel Enha...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)