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ME60N03A

Matsuki
Part Number ME60N03A
Manufacturer Matsuki
Description 25V N-Channel Enhancement Mode MOSFET
Published Feb 7, 2014
Detailed Description 25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@30A =13m ME60N03A ...
Datasheet PDF File ME60N03A PDF File

ME60N03A
ME60N03A

Overview
25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.
5m RDS(ON), Vgs@4.
5V,Ids@30A =13m ME60N03A FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Unless Otherwise Noted) Symbol VDSS VGSS ID IDM Limit 25 ±20 50 100 50 23 -55 to 150 110 15 Steady State 20 40 Unit V V A A W TA=25 TA=70 PD TJ, Tstg ) EAS RθJA RθJC Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse(L=0.
5mH,Rg=25 Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case *The device mounted on 1in2 FR4 board with 2 oz copper Apr, 2007 – Version 4.
1 Free Datasheet http://www.
datasheet4u.
net/ 01 25V N...


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