DatasheetsPDF.com

ME60N03S

Matsuki
Part Number ME60N03S
Manufacturer Matsuki
Description N-Channel MOSFET
Published Mar 22, 2018
Detailed Description ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A ≦ 10mΩ RDS(ON), Vgs@4.5V,Ids...
Datasheet PDF File ME60N03S PDF File

ME60N03S
ME60N03S

Overview
ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A ≦ 10mΩ RDS(ON), Vgs@4.
5V,Ids@15A ≦18.
5mΩ FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for High-side switching of PWM application.
PIN CONFIGURATION (TO-252) Top View APPLICATIONS ● Motherboard (V-Core) ● Portable Equipment ● DC/DC Converter ● Load Switch ● LCD Display inverter ● IPC e Ordering Information: ME60N03S (Pb-free) ME60N03S-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25℃ Continuous Drain Current* TC=70℃ TA=25℃ TA=70℃ Pulsed Drain Current TC=25℃ Maximum Power Dissipation* TC=70℃ TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case *The device mounted on 1in2 FR4 board with 2 oz copper...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)