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MJD31C

Part Number	MJD31C
Manufacturer	GME
Description	Epitaxial Planar NPN Transistor
Published	May 17, 2018
Detailed Description	Epitaxial Planar NPN Transistor FEATURES  Low formed for surface mount application. Pb Lead-free  Electrically sim...
Datasheet	MJD31C PDF File

Overview

Epitaxial Planar NPN Transistor FEATURES  Low formed for surface mount application.
Pb Lead-free  Electrically similar to popular and TIP31C.
 Straight Lead.
APPLICATIONS  General purpose amplifier.
 Low speed switching applications.
Production specification MJD31C TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 3A ICP Collector Current -Peak 5A IB Base Current 1A PC Collector Power Dissipation 1.
25 W Tj ,Tstg Junction and Storage temperature range -6...

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