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2N7002W

GME
Part Number 2N7002W
Manufacturer GME
Description N-Channel Power Mosfet
Published May 18, 2018
Detailed Description Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002W FEATURES  Low On-Resistance。  Lo...
Datasheet PDF File 2N7002W PDF File

2N7002W
2N7002W

Overview
Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002W FEATURES  Low On-Resistance。  Low Gate Threshold Voltage.
 Low Input Capacitance.
 Fast Switching Speed.
 Low Input/Output Leakage.
Pb Lead-free APPLICATIONS  N-channel enhancement mode effect transistor.
 Switching application.
ORDERING INFORMATION Type No.
Marking 2N7002W 7002 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 60 VDGR VGSS ID PD Drain-Gate voltage(RGS≤1MΩ) Gate -Source voltage - continuous -Non Repetitive (tp<50μs) Maximum Drain current -continuous -Pulsed Power Dissipation 60 ±20 ±40 115 800 200 RθJA Thermal resistance,Junction-to-Ambient 625 TJ, Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃/W ℃ F008 Rev.
A www.
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