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BCR08PN

Siemens Semiconductor Group
Part Number BCR08PN
Manufacturer Siemens Semiconductor Group
Description NPN/PNP Silicon Digital Tansistor
Published Mar 23, 2005
Detailed Description BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two (...
Datasheet PDF File BCR08PN PDF File

BCR08PN
BCR08PN


Overview
BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two (galvanic) internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.
2kΩ, R2=47kΩ) Tape loading orientation Type BCR 08PN Marking Ordering Code Pin Configuration WFs Package Q62702-C2486 1=E1 2= B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115°C Junction temperature Storage temperature Symbol Values 50 50 5 10 100 250 150 - 65 .
.
.
+ 150 mA mW °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS ≤ 275 ≤ 140 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.
5mm / 0.
5cm2 Cu Semiconductor Group 1 Nov-26-1996 BCR 08PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit V(BR)CEO 50 2.
2 0.
047 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 164 70 V 0.
3 0.
8 1.
1 2.
9 0.
052 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.
4 VEB = 5 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.
5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage Vi(on) 0.
5 IC = 2 mA, VCE = 0.
3 V Input resistor Resistor ratio AC Characteristics for NPN Type Transition frequency R1 R1/R2 fT 1.
5 0.
042 MHz 170 2 pF - IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% Semiconductor Group 2 Nov-26-1996 BCR 08PN NPN TYPE DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration) Collector-Emitter Saturation Voltage VCEsat = f(IC), hFE = 20 10 3 10 2 - hFE 1...


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