BCR08AM
MITMSIUTBSIUSBHIISSHEI MSEICMOICNODUNCDTUOCRTOAC>
BCR0BC8RA0M8AM
LOWLOPWOWPOEWR EURSEUSE PLAPNLAARNAPARSPSAIVSASTIVIOATNIOTYNPTEYPE
OUTLINE DRAWING
Dimensions in mm
φ5. 0 MAX.
5. 0 MAX.
12. 5 MIN.
➁ ➂
➀
VOLTAGE CLASS
TYPE NAME
➀ T1 TERMINAL ➁ T2 TERMINAL ➂ GATE TERMINAL
CIRCUMSCRIBE CIRCLE φ 0. 7
1. 25 1. 25
• IT (RMS) . . . . 0. 8A • VDRM . 600V • IRGT I, IRGT III 5mA
APPLICATION Electric fan, air cleaner, other general purpose control applications
➀➂➁ JEDEC : TO-92
1. 3 3. 9 MAX.
MAXIMUM RATINGS
Symbol
VDRM VDSM
Parameter
Repetitive peak off-state voltage ✽1 Non-repetitive peak off-state voltage ✽1
Voltage class 12 600 720
Symbol IT (RMS) ITSM
Parameter RMS on-state current Surge on-state current
I2t
I2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
✽1. Gate open.
Conditions Commercial frequency, sine full wave 360° conduction, Tc=56°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Typical value
Unit
V V
Ratings
Unit
0. 8
A
8
A
0. 26
A2s
1
W
0. 1
W
6
V
0. 5
A
–40 ~ +125
°C
–40 ~ +125
°C
0. 23
g
Mar. 2002
MITSUBISHI SEMICONDUCTOR
BCR08AM
LOW POWER USE PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM VTM VRGT I VRGT III IRGT I IRGT III VGD Rth (j-c)
(dv/dt)c
Repetitive peak off-state current On-state voltage Gate trigger voltage ✽2
Gate trigger current ✽2
Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage
Tj=125°C, VDRM applied Tc=25°C, ITM=1. 2A, Instantaneous measurement II Tj=25°C, VD=6V, RL...
BCR08AM PDF File
