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BCR08PN

Infineon Technologies AG
Part Number BCR08PN
Manufacturer Infineon Technologies AG
Description NPN/PNP Silicon Digital Transistor Array
Published Mar 23, 2005
Detailed Description BCR08PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circu...
Datasheet PDF File BCR08PN PDF File

BCR08PN
BCR08PN

Overview
BCR08PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two (galvanic) internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=2.
2k, R2=47k) 2 1 3 VPS05604 Tape loading orientation Top View 654 W1s 123 Direction of Unreeling Position in tape: pin 1 opposite of feed hole side EHA07193 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 6 B2 5 E2 4 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07176 TR2 R1 Type BCR08PN Maximum Ratings Parameter Marking WFs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 5 10 100 250 150 -65 .
.
.
150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115 °C Junction temperature Storage temperature mA mW °C Thermal Resistance Junction - soldering point 1) RthJS  140 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BCR08PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.
5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.
3 V Input resistor Resistor ratio AC Characteristics Transition frequency I C = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb fT R1 R1 /R2 Vi(on) Vi(off) VCEsat hFE IEBO ICBO V(BR)CBO V(BR)CEO Symbol min.
Values typ.
max.
Unit 50 50 70 0.
4 0.
5 1.
5 0.
042 2.
2 0.
047 100 164 0.
3 0.
8 1.
1 2.
9 V nA µA V k 0.
052 - - 170 2 - MHz pF 1) Pulse test: t < 300s; D < 2% 2 Nov-29...


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