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BCV61

Part Number	BCV61
Manufacturer	Infineon Technologies AG
Description	NPN Silicon Double Transistor
Published	Mar 23, 2005
Detailed Description	NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current g...
Datasheet	BCV61 PDF File

Overview

NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCV61 3 4 2 1 C1 (2) C2 (1) Tr.
1 Tr.
2 Type BCV61B BCV61C Marking 1Ks 1Ls E1 (3) E2 (4) EHA00012 1 = C2 1 = C2 Pin Configuration 2 = C1 3 = E1 4 = E2 2 = C1 3 = E1 4 = E2 Package SOT143 SOT143 Maximum Ratings Parameter Collector-emitter voltage (transistor T1) Symbol VCEO Value 30 Collector-base voltage (open emitter) (transistor T1) VCBO 30 Emitter-base voltage DC collector current Peak collector current, tp < 10 ms Base peak current (transistor T1) Total power dissipation, TS = 99 °C Junction temperature Storage temperature VEBS IC ICM IBM Ptot Tj Tstg 6 100 200 200 300 150 -65 .
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150 Thermal Resistance Junction - soldering point1) RthJS ≤170 1For calculation of RthJA please refer to Application Note AN077 (Thermal...

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