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BCV71

Diotec Semiconductor
Part Number BCV71
Manufacturer Diotec Semiconductor
Description Surface mount Si-Epitaxial PlanarTransistors
Published Mar 23, 2005
Detailed Description BCV 71, BCV 72 NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTra...
Datasheet PDF File BCV71 PDF File

BCV71
BCV71

Overview
BCV 71, BCV 72 NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.
9 ±0.
1 0.
4 3 250 mW SOT-23 (TO-236) 0.
01 g 1.
1 Plastic case Kunststoffgehäuse 1.
3 ±0.
1 Type Code 1 2 2.
5 max Weight approx.
– Gewicht ca.
Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.
9 Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (DC) Peak Collector current – Kollektor-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM Tj TS Grenzwerte (TA = 25/C) BCV 71, BCV 72 60 V 80 V 5V 250 mW 1) 100 mA 200 mA 150/C - 65…+ 150/C Kennwerte (Tj = 25/C) Min.
Typ.
– – – 90 150 – – Max.
100 nA 10 :A 100 nA – – 220 450 Characteristics (Tj = 25/C) Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 20 V IE = 0, VCB = 20 V, Tj = 100/C Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V VCE = 5 V, IC = 10 :A VCE = 5 V, IC = 2 mA BCV 71 BCV 72 BCV 71 BCV 72 IEB0 2 ICB0 ICB0 – – – – – 110 200 DC current gain – Kollektor-Basis-Stromverhältnis ) hFE hFE hFE hFE 1 ) Mounted on P.
C.
board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 32 01.
11.
2003 General Purpose Transistors Characteristics (Tj = 25/C) Min.
Collector saturation volt.
– Kollektor-Sättigungsspg.
1) IC = 10 mA, IB = 0.
5 mA IC = 50 mA, IB = 5 mA IC = 10 mA, IB = 0.
5 mA IC = 50 mA, IB = 2.
5 mA Base-Emitter voltage – Basis-Emitter-Spannung 1) VCE = 5 V, IC =...


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