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NCE30H11G

NCE Power Semiconductor
Part Number NCE30H11G
Manufacturer NCE Power Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Jun 2, 2018
Detailed Description http://www.ncepower.com Pb Free Product NCE30H11G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11...
Datasheet PDF File NCE30H11G PDF File

NCE30H11G
NCE30H11G

Overview
http://www.
ncepower.
com Pb Free Product NCE30H11G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =30V,ID =110A RDS(ON) <2.
4 mΩ @ VGS=10V RDS(ON) <3.
0mΩ @ VGS=4.
5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Schematic Diagram DDDD DDDD SSSG Top View GSSS Bottom View 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking NCE30H11G Device NCE30H11G Device Package DFN5X6-8L Reel Size - Tape width - Quantity - Absolut...


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