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NCE30H12

NCE Power Semiconductor
Part Number NCE30H12
Manufacturer NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Published May 22, 2015
Detailed Description http://www.ncepower.com Pb Free Product NCE30H12 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12 ...
Datasheet PDF File NCE30H12 PDF File

NCE30H12
NCE30H12

Overview
http://www.
ncepower.
com Pb Free Product NCE30H12 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =30V,ID =120A RDS(ON) <3.
5mΩ @ VGS=10V (Typ:3.
0mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE30H12 NCE30H12 TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless o...


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