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NCE30H15K

NCE Power Semiconductor
Part Number NCE30H15K
Manufacturer NCE Power Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Feb 5, 2016
Detailed Description http://www.ncepower.com Pb Free Product NCE30H15K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15...
Datasheet PDF File NCE30H15K PDF File

NCE30H15K
NCE30H15K

Overview
http://www.
ncepower.
com Pb Free Product NCE30H15K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =30V,ID =150A RDS(ON) <4.
0 mΩ @ VGS=10V RDS(ON) <5.
0mΩ @ VGS=4.
5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package NCE30H15K NCE30H15K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Single pulse avalanche energy (Note 5) EAS Operating Junction and Storage Temperature Range TJ,TSTG Limit 30 ±20 150 105 600 130 0.
87 1700 -55 To 175 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 v1.
0 http://www.
ncepower.
com Pb Free Product NCE30H15K Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1.
15 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) BVDSS IDSS IGSS VGS=0V ID=250μA VDS=30V,VGS=0V VGS=±20V,VDS=0V 30 35 - -- 1 - - ±100 V μA nA Gate Threshold Voltage Drai...


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