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NCE30H10G

NCE Power Semiconductor
Part Number NCE30H10G
Manufacturer NCE Power Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Feb 5, 2016
Detailed Description http://www.ncepower.com Pb Free Product NCE30H10G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10...
Datasheet PDF File NCE30H10G PDF File

NCE30H10G
NCE30H10G

Overview
http://www.
ncepower.
com Pb Free Product NCE30H10G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =30V,ID =100A RDS(ON) <2.
5 mΩ @ VGS=10V RDS(ON) <3.
5mΩ @ VGS=4.
5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Marking and pin assignment Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply DFN5X6-8L top view Package Marking and Ordering Information Device Marking NCE30H10G Device NCE30H10G Device Package DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Drain-S...


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