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CEH2307

Part Number	CEH2307
Manufacturer	CET
Description	P-Channel MOSFET
Published	Jun 12, 2018
Detailed Description	CEH2307 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4A , RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = ...
Datasheet	CEH2307 PDF File

Overview

CEH2307 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4A , RDS(ON) = 78mΩ @VGS = -10V.
RDS(ON) = 120mΩ @VGS = -4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4 5 6 3 2 1 TSOP-6 G(3) D(1,2,5,6,) S(4) ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -4 IDM -16 Maximum Power Dissipation PD 2.
0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Lim...

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