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CEH2331

Chino-Excel Technology
Part Number CEH2331
Manufacturer Chino-Excel Technology
Description P-Channel FET
Published Mar 10, 2011
Detailed Description P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -5.2A , RDS(ON) = 48mΩ @VGS = -4.5V. RDS(ON) = 60mΩ @V...
Datasheet PDF File CEH2331 PDF File

CEH2331
CEH2331

Overview
P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -5.
2A , RDS(ON) = 48mΩ @VGS = -4.
5V.
RDS(ON) = 60mΩ @VGS = -2.
5V.
RDS(ON) = 78mΩ @VGS = -1.
8V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
6 5 4 G(3) 1 TSOP-6 2 3 CEH2331 PRELIMINARY D(1,2,5,6,) S(4) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -20 Units V V A A W C ±12 -5.
2 -21 2.
0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.
5 Units C/W www.
DataSheet4U.
com This is preliminary information on a new product in development now .
Details are subject to change without notice .
1 Rev 2.
2010.
Sep http://www.
cetsemi.
com CEH2331 Electrical Characteristics Parameter Off Ch...


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