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CEH2305

CET
Part Number CEH2305
Manufacturer CET
Description P-Channel Enhancement Mode Field Effect Transistor
Published Oct 8, 2015
Detailed Description CEH2305 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4.9A , RDS(ON) = 52mΩ @VGS = ...
Datasheet PDF File CEH2305 PDF File

CEH2305
CEH2305

Overview
CEH2305 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4.
9A , RDS(ON) = 52mΩ @VGS = -10V.
RDS(ON) = 65mΩ @VGS = -4.
5V.
RDS(ON) = 119mΩ @VGS = -2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4 5 6 3 2 1 TSOP-6 G(3) D(1,2,5,6,) S(4) ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID -4.
9 IDM -20 Maximum Power Dissipation PD 2.
0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal R...


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