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CED02N65G

CET
Part Number CED02N65G
Manufacturer CET
Description N-Channel MOSFET
Published Jun 12, 2018
Detailed Description CED02N65G/CEU02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.8A, RDS(ON) = 5.5Ω @VGS = 10V. ...
Datasheet PDF File CED02N65G PDF File

CED02N65G
CED02N65G


Overview
CED02N65G/CEU02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.
8A, RDS(ON) = 5.
5Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit VDS 650 VGS ±30 ID 1.
8 1.
1 IDM 7.
2 48 PD 0.
38 EAS 11.
25 IAS 1.
5 TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.
6 50 Units V V A A A W W/ C mJ A C Units C/W C/W Detai...


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