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CED02N6G

Chino-Excel Technology
Part Number CED02N6G
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Mar 11, 2011
Detailed Description N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2A, RDS(ON) = 5Ω @VGS = 10V. Super high dense cell des...
Datasheet PDF File CED02N6G PDF File

CED02N6G
CED02N6G

Overview
N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2A, RDS(ON) = 5Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED02N6G/CEU02N6G D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy e Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 600 Units V V A A A W W/ C mJ A C ±30 2 1.
3 8 52 0.
4 11.
25 1.
5 -55 to 150 Single Pulsed Avalanche Current e Operating and Store Temperature Range Thermal Characteristics Parameter Symbol RθJC RθJA Limit 2.
4 50 Units C/W C/W www.
DataSheet4U.
com Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Details are subject to change without notice .
1 Rev 5.
2011.
Feb http://www.
cetsemi.
com CED02N6G/CEU02N6G Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1A VDS = 480V, ID = 1A, VGS = 10V VDD = 300V, ID = 1A, VGS = 10V, RGEN = 18Ω 19 11 29 10 6.
7 1.
5 3 1.
9 1.
5 38 22 58 20 8.
9 ns ns ns ns nC nC nC A V Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.
0 MHz 295 75 20 pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS ...


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