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CED02N6

CET
Part Number CED02N6
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CED02N6/CEU02N6 Dec. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 1.9A , RDS(ON)...
Datasheet PDF File CED02N6 PDF File

CED02N6
CED02N6

Overview
CED02N6/CEU02N6 Dec.
2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 1.
9A , RDS(ON)=5 Ω @VGS=10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-251 & TO-252 package.
D 6 G D G S G D S CEU SERIES TO-252AA(D-PAK) CED SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous (Tc=25 C) -Continuous (Tc=100 C) -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID ID IDM IS PD TJ, TSTG Limit 600 Unit V V A A A A W W/ C C Ć 30 1.
9 1.
2 6 6 43 0.
34 -55 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 6-77 RįJC RįJA 2.
9 50 C/W C/W CED02N6/CEU02N6 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Symbol a Condition VDD =50V, L=60mH RG=9.
1 Ω Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATING 6 EAS IAS 125 2 mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS b VGS = 0V,ID = 250µA VDS = 600V, VGS = 0V VGS = Ć30V, VDS = 0V VDS = VGS, ID = 250µA VGS =10V, ID = 1A VGS = 10V, VDS = 10V VDS = 50V, ID = 1A VDD = 300V, ID = 2A, VGS = 10V RGEN=18Ω 600 25 V µA Ć100 nA ON CHARACTERISTICS a Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 2 3.
8 2 1.
2 18 18 50 16 20 VDS =480V, ID = 2A, VGS =10V 6-78 4 5.
0 V Ω A S SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 35 35 90 40 25 ns ns ns ns nC nC nC 2 12 CED02N6/CEU02N6 ELECTRICAL CHARACTERISTICS (TC=...


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