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CED02N6A

CET
Part Number CED02N6A
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CED02N6A/CEU02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.3A, RDS(ON) = 8 Ω @VGS = 10V. Supe...
Datasheet PDF File CED02N6A PDF File

CED02N6A
CED02N6A


Overview
CED02N6A/CEU02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.
3A, RDS(ON) = 8 Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 650 Units V V A A W W/ C C ±30 1.
3 3.
9 35 0.
29 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.
5 50 Units W/ C W/ C 2005.
July 6-6 http://www.
cetsemi.
com CED02N6A/CEU02N6A Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 0.
8A VDS = 480V, ID = 1A, VGS = 10V VDD = 300V, ID = 1A, VGS = 10V, RGEN = 18Ω 11 16 28 16 15 2.
4 8.
7 0.
8 1.
5 27 40 35 40 21 ns ns ns ns nC nC nC A V c Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 0.
8A VDS = 50V, ID = 0.
8A 2 6.
2 ...


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