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2SD684A

Part Number	2SD684A
Manufacturer	Toshiba
Description	NPN Transistor
Published	Jul 16, 2018
Detailed Description	: 2SD684A , SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) Unit in mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHI...
Datasheet	2SD684A PDF File

Overview

: 2SD684A , SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) Unit in mm IGNITER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES • High DC Current Gain : h FE=600 (Min.
) (V CE=2V, Ic=2A) • Monolithic Construction With Built-in Base-Emitter Shunt Resistor.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT SYMBOL v CBO VCEO .
Vebo ic IB PC Ti Tstg RATING 600 400 5 6 1 30 150 -65vL50 UNIT V V V A A W °C °c 1, BASE 2.
EMITTER COLLECTOR(CASE) JEDEC EIAJ TOSHIBA TO 66 TC — 16A, TB ...

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