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BTA316B-600B0

WeEn
Part Number BTA316B-600B0
Manufacturer WeEn
Description 3Q Hi-Com Triac
Published Jul 30, 2018
Detailed Description BTA316B-600B0 3Q Hi-Com Triac Rev.02 - 30 July 2021 Product data sheet 1. General description Planar passivated high c...
Datasheet PDF File BTA316B-600B0 PDF File

BTA316B-600B0
BTA316B-600B0


Overview
BTA316B-600B0 3Q Hi-Com Triac Rev.
02 - 30 July 2021 Product data sheet 1.
General description Planar passivated high commutation three quadrant triac in a TO263 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
This "series B0" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber.
2.
Features and benefits • 3Q technology for improved noise immunity • High immunity to false turn-on by dV/dt • High minimum IGT for guaranteed immunity to gate noise • High voltage capability • Surface mountable package • Least sensitive gate for highest noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only • Very high commutation capability with maximum false trigger immunity 3.
Applications • Electronic thermostats (heating and cooling) • High power motor controls e.
g.
washing machines and vacuum cleaners • Rectifier-fed DC inductive loads e.
g.
DC motors and solenoids • Refrigeration and air conditioning compressors 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak on- state current Tj junction temperature Symbol Parameter Static characteristics Conditions full sine wave; Tmb ≤ 101 °C; Fig.
1; Fig.
2; Fig.
3 full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig.
4; Fig.
5 full sine wave; Tj(init) = 25 °C; tp = 16.
7 ms Conditions IGT gate trigger current VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7 Min Typ Max Unit - - 600 V - - 16 A - - 140 A - - 150 A - - 125 °C Min Typ Max Unit 10 - 10 - 10 - 50 mA 50 mA 50 mA WeEn Semiconductors BTA316-600B0 3Q Hi-Com Triac IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise o...



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