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BTA316B-600BT

WeEn
Part Number BTA316B-600BT
Manufacturer WeEn
Description 3Q Hi-Com Triac
Published Jul 30, 2018
Detailed Description BTA316B-600BT 3Q Hi-Com Triac Rev.02 - 19 April 2019 Product data sheet 1. General description Planar passivated high ...
Datasheet PDF File BTA316B-600BT PDF File

BTA316B-600BT
BTA316B-600BT

Overview
BTA316B-600BT 3Q Hi-Com Triac Rev.
02 - 19 April 2019 Product data sheet 1.
General description Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber.
It is used in applications where "high junction operating temperature capability" is required.
2.
Features and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High junction operating temperature capability • High voltage capability • Less sensitive gate for very high noise immunity • Planar passivated for voltage ruggedness and reliability • Surface mountable package • Triggering in three quadrants only 3.
Applications • Applications subject to high temperature • Electronic thermostats (heating and cooling) • High power motor controls e.
g.
washing machines and vacuum cleaners • Rectifier-fed DC inductive loads e.
g.
DC motors and solenoids 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 120 °C; Fig.
1; Fig.
2; Fig.
3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms; state current Fig 4; Fig 5 full sine wave; Tj(init) = 25 °C; tp = 16.
7 ms Tj junction temperature Static characteristics Min Typ Max Unit - - 600 V - - 16 A - - 140 A - - 150 A - - 150 °C WeEn Semiconductors Symbol Parameter IGT gate trigger current IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating curren Conditions VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
7 VD =...


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