DatasheetsPDF.com

BTA316B-600BT

NXP
Part Number BTA316B-600BT
Manufacturer NXP
Description 3Q Hi-Com Triac
Published Sep 29, 2015
Detailed Description D2PAK BTA316B-600BT 3Q Hi-Com Triac 6 August 2014 Product data sheet 1. General description Planar passivated high co...
Datasheet PDF File BTA316B-600BT PDF File

BTA316B-600BT
BTA316B-600BT

Overview
D2PAK BTA316B-600BT 3Q Hi-Com Triac 6 August 2014 Product data sheet 1.
General description Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/ dt and high dI/dt can occur.
This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber.
It is used in applications where "high junction operating temperature capability" is required.
2.
Features and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High junction operating temperature capability • High voltage capability • Less sensitive gate for very high noise immunity • Planar passivated for voltage ruggedness and reliability • Surface mountable package • Triggering in three quadrants only 3.
Applications • Applications subject to high temperature • Electronic thermostats (heating and cooling) • High power motor controls e.
g.
washing machines and vacuum cleaners • Rectifier-fed DC inductive loads e.
g.
DC motors and solenoids 4.
Quick reference data Table 1.
Symbol VDRM ITSM Tj IT(RMS) Quick reference data Parameter Conditions repetitive peak offstate voltage non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig.
4; Fig.
5 junction temperature RMS on-state current full sine wave; Tmb ≤ 120 °C; Fig.
1; Fig.
2; Fig.
3 Min Typ Max Unit - - 600 V - - 140 A - - 150 °C - - 16 A Scan or click this QR code to view the latest information for this product NXP Semiconductors BTA316B-600BT 3Q Hi-Com Triac Symbol Parameter Conditions Static characteristics IGT gate trigger current VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7 Dynamic characteristics dV...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)