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BTA316B-600C

WeEn
Part Number BTA316B-600C
Manufacturer WeEn
Description 3Q Hi-Com Triac
Published Oct 3, 2019
Detailed Description BTA316B-600C 3Q Hi-Com Triac Rev.02 - 06 May 2019 Product data sheet 1. General description Planar passivated high com...
Datasheet PDF File BTA316B-600C PDF File

BTA316B-600C
BTA316B-600C

Overview
BTA316B-600C 3Q Hi-Com Triac Rev.
02 - 06 May 2019 Product data sheet 1.
General description Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
This "series C" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber.
2.
Features and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High voltage capability • Planar passivated for voltage ruggedness and reliability • Surface mountable package • Triggering in three quadrants only 3.
Applications • Electronic thermostats (heating and cooling) • High power motor controls e.
g.
washing machines and vacuum cleaners • Rectifier-fed DC inductive loads e.
g.
DC motors and solenoids 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Absolute maximum rating VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak on- state current Tj junction temperature Symbol Parameter Static characteristics IGT gate trigger current Conditions full sine wave; Tmb ≤ 101 °C Fig.
1; Fig.
2; Fig.
3 full sine wave; Tj(init) = 25 °C; tp = 20 ms Fig.
4; Fig.
5 full sine wave; Tj(init) = 25 °C; tp = 16.
7 ms Conditions VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7 Values Unit 600 V 16 A 140 A 150 125 Min Typ A °C Max Unit 2 - 2 - 35 mA 35 mA WeEn Semiconductors BTA316B-600C 3Q Hi-Com Triac Symbol Parameter IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating current Conditions VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7 VD = 12 V; Tj = 25 °C; Fig.
9 IT = 18 A; Tj = 25 °C; Fig.
10 VDM = 402 V; Tj = 125...


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