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2N7002E

ON Semiconductor
Part Number 2N7002E
Manufacturer ON Semiconductor
Description MOSFET
Published Sep 10, 2018
Detailed Description 2N7002E Small Signal MOSFET Single N−Channel, 60 V, 310 mA, 2.5 Ohm Features • Low RDS(on) • Small Footprint Surface M...
Datasheet PDF File 2N7002E PDF File

2N7002E
2N7002E

Overview
2N7002E Small Signal MOSFET Single N−Channel, 60 V, 310 mA, 2.
5 Ohm Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Low Side Load Switch • Level Shift Circuits • DC−DC Converter • Portable Applications i.
e.
DSC, PDA, Cell Phone, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Drain Current (Note 1) Steady State VDSS 60 V VGS ±20 V ID TA = 25°C TA = 85°C mA 260 190 t<5s Power Dissipation (Note 1) Steady State t<5s TA = 25°C TA = 85°C PD 310 220 mW 300 420 Pulsed Drain Current (tp = 10 ms) Operating Junction and Storage Temperature Range IDM 1.
2 A TJ, TSTG −55 to °C +150 Source Current (Body Diode) IS 300 mA Lead Tempera...


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