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2N838

Part Number	2N838
Manufacturer	Motorola
Description	PNP germanium epitaxial mesa transistor
Published	Nov 8, 2018
Detailed Description	2N838 (GERMANIUM) "CASE 22 (TO·18) Collector connected to CBse PNP germanium epitaxial mesa transistor for highspeed s...
Datasheet	2N838 PDF File

Overview

2N838 (GERMANIUM) "CASE 22 (TO·18) Collector connected to CBse PNP germanium epitaxial mesa transistor for highspeed switching applications.
MAXIMUM RATINGS Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage .
VCB 30 Vdc VCES 30 Vdc VCEX 15 Vdc Emitter-Base Boltage Collector Current (Continuous) Junction Temperature Storage Temperature Device Dissipation @TA =250 C (Derate 2mW/oC above 250 C) VEB 2.
5 Vdc Ie 100 mAdc TJ +100 °c Tstg -65 to+ 100 °c PD 1.
50 mW 2.
0 mW/OC FIGURE 1 - SWITCHING TIME TEST CIRCUIT Ie.
=GENERATOR Z.
.
.
50!! Vee = -3V -=INPUT PULSE t, = t.
1 ns 1'1 I" INPUT PULSE WIDTH = 100 ns (5q% DUTY CYCLE) 275 !! = -IDmAdc = -3.
3mAdc = +3.
3mAdc SCOPE liN:=:: 1 Megn CIN :::;; 20 pF t.
::::: 1 ns VlEI01 = +4Vdc 80 .
~s ~ ~ '~" '-' '~" is '-' ~ FIGURE 2 - AREA OF PERMISSIBLE LOAD LOCI VeE' COLLECTOR·EMITTER VOLTAGE (VOLTS) 2-107 2N838 (continued) ELECTRICAL CHARACTERISTICS (TA = 25°C unless ot...

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