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8205A

HOTTECH
Part Number 8205A
Manufacturer HOTTECH
Description Dual N-Channel MOSFET
Published Apr 25, 2019
Detailed Description Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technolo...
Datasheet PDF File 8205A PDF File

8205A
8205A

Overview
Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
General Features ● VDS = 19.
5V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.
5V RDS(ON) < 27mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Battery protection ●Load switch ●Power management pin Assignment 8205A TSSOP-8 top view D1 D2 G1 G2 S1 S2 Schematic diagram Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=19.
5V,VGS=0V Limit 19.
5 ±10 6 25 1.
5 -55 To 150 Unit V V A A W ℃ 83 ℃/W Min Typ Max Unit 19.
5 21 V 1 μA GUANGDONG HOTTECH INDUSTRIAL CO.
, LTD Page:P5 -P1 Plastic-Encapsulate Mosfets Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) IGSS VGS(th) RDS(ON) gFS Clss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS Notes...


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