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8205

Fortune Semiconductor
Part Number 8205
Manufacturer Fortune Semiconductor
Description Dual N-Channel Power MOSFET
Published Jan 13, 2022
Detailed Description REV. 1.9 FS8205-DS-19_EN AUG 2016 For RefPerrFoepOnecRrteTieUOsnNlEy’ Datasheet FS8205 Dual N-Channel Enhancement Mod...
Datasheet PDF File 8205 PDF File

8205
8205


Overview
REV.
1.
9 FS8205-DS-19_EN AUG 2016 For RefPerrFoepOnecRrteTieUOsnNlEy’ Datasheet FS8205 Dual N-Channel Enhancement Mode Power MOSFET Fortune Semiconductor Corporation 23F.
,No.
29-5, Sec.
2, Zhongzheng E.
Rd.
, Danshui Dist, New Taipei City 251, Taiwan Tel.
:886-2-28094742 Fax:886-2-28094874 www.
ic-fortune.
com FS8205 For RefPerrFoepOnecRrteTieUOsnNlEy’ This manual contains new product information.
Fortune Semiconductor Corporation reserves the rights to modify the product specification without further notice.
No liability is assumed by Fortune Semiconductor Corporation as a result of the use of this product.
No rights under any patent accompany the sale of the product Rev.
1.
9 2/2 FS8205 1.
Features 1.
1 Low on-resistance 1.
1.
1 RDS(ON) = 28 mΩ MAX.
(VGS = 4.
5V, ID = 4A) 1.
1.
2 RDS(ON) = 37 mΩ MAX.
(VGS = 2.
5V, ID = 3A) 2.
Applications „ Li-ion battery management applications 3.
Ordering Information Product Number Description FS8205 SOT23-6 package version 4.
Pin Assignment Package Type SOT23-6 Quantity/Reel 3,000 For RefPerrFoepOnecRrteTieUOsnNlEy’ For FS8205 w : A~Z or A ~ Z Top points, bottom points & w: Lot no information 5.
Absolute Maximum Ratings Symbol VDS VGS ID @TA = 25℃ ID @TA = 70℃ IDM PD @TA = 25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rev.
1.
9 Rating 20 ±12 6 5 25 1 0.
008 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ 3/3 For RefPerrFoepOnecRrteTieUOsnNlEy’ FS8205 6.
Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Value Max.
125 Unit ℃/W 7.
Electrical Characteristics Electrical Characteristics @Tj = 25℃ ( unless otherwise specified ) Symbol Parameter Test Conditions Static Characteristics BVDSS ΔBVDSS/ΔTj RDS(ON) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Stati...



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