DatasheetsPDF.com

8205A

RZC Microelectronics
Part Number 8205A
Manufacturer RZC Microelectronics
Description Dual N-Channel MOSFET
Published Oct 28, 2014
Detailed Description 8205A Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses a...
Datasheet PDF File 8205A PDF File

8205A
8205A

Overview
8205A Dual N-Channel MOSFET .
GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch .
FEATURES l VDS =20 V l ID =6A l Low on-state resistance Fast switching RDS(on) = 45mΩ (typ.
)(VGS = 4.
5V, ID = 2.
0A) RDS(on) = 48mΩ (typ.
)(VGS = 3.
85V, ID = 2.
0A) RDS(on) = 60mΩ (typ.
)(VGS = 2.
5V, ID = 2.
0A) l Lead free product is acquired l Surface Mount Package APPLICATION l Battery protection l Load switch l Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking 8205A Device 8250A Device Package TSSOP8 Reel size Tape width 8mm Quantity 3000 units Φ180mm PIN DESCRIPTION Datasheet 2012-2-27 Page 1 of 6 8205A PIN NUM 1 2 3 4 5 6 7 8 PIN NAME D S1 S1 G1 G2 S2 S2 D PIN FUNCTION DRAIN SOURCE1 SOURCE1 GATE2 GATE2 SOURCE2 SOURCE2 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25℃) Symbol VDS ID IDM VGS PD Tstg Parameter Drain-source Voltage Drain Current(continuous)at Tc=25℃ Drain Current (pulsed) Gate-source Voltage Power Dissipation (TC = 25°C) Operating and Storage Temperature Rang Value 20 (Note1) (Note2) (Note1) 6 24 ±12 1.
25 -55 to +150 Unit V A A V W ℃ Notes a.
PW<10us,Duty Cycle<1%,VGS=4.
5V 2 b.
Mounted on ceramic substrate of 45 cm x 2.
2mm.
Caution: These values must not be exceeded under any conditions.
Remark: The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction- ambient Max.
83 Unit ℃/W Electrical Characteristics (TC = 25℃) Symbol V(BR)DSS IDSS IGSS VGS(th) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate threshold voltage Test Condition...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)