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8205A

HSMC
Part Number 8205A
Manufacturer HSMC
Description Dual N-Channel MOSFET
Published Oct 28, 2014
Detailed Description HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200701 Issued Date : 2007.03.01 Revised Date : 2007.03.12 Page No. :...
Datasheet PDF File 8205A PDF File

8205A
8205A

Overview
HI-SINCERITY MICROELECTRONICS CORP.
Spec.
No.
: MOS200701 Issued Date : 2007.
03.
01 Revised Date : 2007.
03.
12 Page No.
: 1/4 8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 8-Lead Plastic TSSOP-8L 8205A Symbol & Pin Assignment Description This N-Channel 2.
5V specified MOSFET is a rugged gate version of advanced trench process.
It has been optimized for power management applications with a wide range of gate drive voltage (2.
5V-10V) 8 7 6 5 Q2 Q1 1 2 3 4 Pin 1: Drain Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain Features • RDS(on)=38mΩ@VGS=2.
5V, ID=5.
2A; RDS(on)=25mΩ@VGS=4.
5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power and Current Handing Capability • Fully Characterized Avalanche Voltage and Current • Ideal for Li ion Battery Pack Applications Applications • Battery Protection • Load Switch • Power Management Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 o o Parameter Ratings 20 ±12 6 30 1.
5 0.
96 -55 to +150 83 Units V V A A W W °C °C/W Total Power Dissipation @TA=25 C Total Power Dissipation @TA=75 C Operating and Storage Temperature Range Thermal Resistance Junction to Ambient *2 *1: Maximum DC current limited by the package 2 *2: 1-in 2oz Cu PCB board 8205A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol • Static BVDSS RDS(on) VGS(th) IDSS IGSS gFS • Dynamic Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=10V, ID=1A, VGS=4.
5V RGEN=6Ω VDS=8V, VGS=0V, f=1MHz VDS=10V, ID=6A, VGS=4.
5V Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate...


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