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AJT006

Advanced Semiconductor
Part Number AJT006
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Mar 23, 2005
Detailed Description AJT006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG 4x .062 x 45° A .040 x 45° C DESCRIPTION: D 2xB ØE F...
Datasheet PDF File AJT006 PDF File

AJT006
AJT006

Overview
AJT006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .
310 2L FLG 4x .
062 x 45° A .
040 x 45° C DESCRIPTION: D 2xB ØE F G H I J K L R N DIM A B C D E F G H I J .
552 / 14.
02 .
790 / 20.
07 .
300 / 7.
62 .
003 / 0.
08 .
052 / 1.
32 .
118 / 3.
00 MINIMUM inches / mm The ASI AJT006 is Designed for FEATURES: • Input Matching Network • • Omnigold™ Metalization System M P MAXIMUM inches / mm .
095 / 2.
41 .
100 / 2.
54 .
050 / 1.
27 .
286 / 7.
26 .
110 / 2.
79 .
306 / 7.
77 .
148 / 3.
76 .
400 / 10.
16 .
119 / 3.
02 .
105 / 2.
67 .
120 / 3.
05 .
306 / 7.
77 .
130 / 3.
30 .
318 / 8.
08 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC O 0.
9 A 32V 25 W @ TC ≤ 75 C O O O .
572 / 14.
53 .
810 / 20.
57 .
320 / 8.
13 .
006 / 0.
15 .
072 / 1.
83 .
131 / 3.
33 .
230 / 5.
84 K L M N P R -65 C to +250 C -65 C to +200 C 7.
0 OC/W O ORDER CODE: ASI10544 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC IC = 1 mA IC = 5 mA IE = 1 mA VCE = 28 V TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 48 48 3.
5 0.
5 UNITS V V V mA --dB % VCE = 5.
0 V VCC = 45 V IC = 250 mA POUT = 6.
0 W f = 960-1215 MHz 30 9.
3 40 300 A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
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