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AJT085

Advanced Semiconductor
Part Number AJT085
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Mar 23, 2005
Detailed Description AJT085 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG A .025 x 45° DESCRIPTION: C 2X B ØD 4x .062 x 45° ...
Datasheet PDF File AJT085 PDF File

AJT085
AJT085

Overview
AJT085 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .
400 2NL FLG A .
025 x 45° DESCRIPTION: C 2X B ØD 4x .
062 x 45° The ASI AJT085 is Designed for E F G FEATURES: • Input Matching Network • • Omnigold™ Metalization System H I J K P M N L DIM A B C D E MINIMUM inches / mm MAXIMUM inches / mm .
020 / 0.
51 .
100 / 2.
54 .
376 / 9.
55 .
110 / 2.
79 .
395 / 10.
03 .
193 / 4.
90 .
450 / 11.
43 .
125 / 3.
18 .
640 / 16.
26 .
890 / 22.
61 .
395 / 10.
03 .
004 / 0.
10 .
052 / 1.
32 .
118 / 3.
00 .
030 / 0.
76 .
396 / 10.
06 .
130 / 3.
30 .
407 / 10.
34 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC 8.
0 A 40 V 300 W @ TC ≤ 100 C O F G H I J K L .
660 / 16.
76 .
910 / 23.
11 .
415 / 10.
54 .
007 / 0.
18 .
072 / 1.
83 .
131 / 3.
33 .
230 / 5.
84 -65 OC to +250 OC -65 OC to +200 OC 0.
75 OC/W M N P ORDER CODE: ASI10547 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC IC = 25 mA IC = 25 mA IE = 10 mA VCE = 35 V TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 55 55 3.
5 20 UNITS V V V mA --dB % VCE = 5.
0 V VCC = 50 V MHz IC = 2.
0 A POUT = 85 W f = 960 – 1215 20 7.
5 40 200 A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
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