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AJT015

Advanced Semiconductor
Part Number AJT015
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Mar 23, 2005
Detailed Description AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: The ASI AJT015 is Designed for 4x .062 x...
Datasheet PDF File AJT015 PDF File

AJT015
AJT015

Overview
AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .
310 2L FLG DESCRIPTION: The ASI AJT015 is Designed for 4x .
062 x 45° 2xB D G H ØE F A .
040 x 45° C FEATURES: • Input Matching Network • • Omnigold™ Metalization System M I J K L R N P DIM A B MINIMUM inches / mm MAXIMUM inches / mm .
095 / 2.
41 .
100 / 2.
54 .
050 / 1.
27 .
286 / 7.
26 .
110 / 2.
79 .
306 / 7.
77 .
148 / 3.
76 .
400 / 10.
16 .
119 / 3.
02 .
552 / 14.
02 .
790 / 20.
07 .
300 / 7.
62 .
003 / 0.
08 .
052 / 1.
32 .
118 / 3.
00 .
105 / 2.
67 .
120 / 3.
05 .
306 / 7.
77 .
130 / 3.
30 .
318 / 8.
08 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC 1.
8 A 32 V 50 W @ TC ≤ 100 C O C D E F G H I J K L M N P R .
572 / 14.
53 .
810 / 20.
57 .
320 / 8.
13 .
006 / 0.
15 .
072 / 1.
83 .
131 / 3.
33 .
230 / 5.
84 -65 OC to +250 OC -65 C to +200 C 3.
0 OC/W O O ORDER CODE: ASI10545 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE IC = 10 mA IC = 10 mA IE = 1 mA VCE = 28 V TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω VBE = 0 V IC = 500 mA MINIMUM TYPICAL MAXIMUM 55 55 3.
5 2.
0 15 150 UNITS V V V mA --- VCE = 5.
0 V PG ηC VCC = 45 V POUT = 15 W f = 960 - 1215 MHz 8.
1 40 dB % A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...


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