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AJT030

Part Number	AJT030
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Published	Mar 23, 2005
Detailed Description	AJT030 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG L N J A B E D K O DESCRIPTION: The ASI AJT030 is Desi...
Datasheet	AJT030 PDF File

Overview

AJT030 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .
400 2L FLG L N J A B E D K O DESCRIPTION: The ASI AJT030 is Designed for C .
062 x 45° M Ø .
120 P I Q R FEATURES: • Input Matching Network • • Omnigold™ Metalization System F H G DIM A B C D MINIMUM inches / mm MAXIMUM inches / mm .
140 / 3.
56 .
110 / 2.
80 .
110 / 2.
80 .
395 / 10.
03 .
193 / 4.
90 .
230 / 5.
84 .
003 / 0.
08 .
118 / 3.
00 .
063 / 1.
60 .
650 / 16.
51 .
386 / 9.
80 .
900 / 22.
86 .
450 / 11.
43 .
125 / 3.
18 .
050 / 1.
27 .
405 / 10.
29 .
170 / 4.
32 .
062 / 1.
58 .
006 / 0.
15 .
131 / 3.
33 .
407 / 10.
34 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC O E F G H I 3.
5 A 40 V 75 W @ TC ≤ 85 C O O J K L M N O P Q -65 C to +250 C -65 OC to +200 OC 2.
2 OC/W R ORDER CODE: ASI10546 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC IC = 10 mA IC = 20 mA TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 55 55 3.
5 5.
0 UNITS V V V mA --dB % IE = 1.
0 mA VCE = 35 V VCE = 5.
0 V VCC = 50 V IC = 1.
0 A POUT = 30 W f = 960 - 1215 MHz 15 7.
8 40 150 A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...

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