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BTA316B-600E

WeEn
Part Number BTA316B-600E
Manufacturer WeEn
Description 3Q Hi-Com Triac
Published Oct 3, 2019
Detailed Description BTA316B-600E 3Q Hi-Com Triac Rev.02 - 06 May 2019 Product data sheet 1. General description Planar passivated high com...
Datasheet PDF File BTA316B-600E PDF File

BTA316B-600E
BTA316B-600E

Overview
BTA316B-600E 3Q Hi-Com Triac Rev.
02 - 06 May 2019 Product data sheet 1.
General description Planar passivated high commutation three quadrant triac in a TO263 plastic package.
This "series E" triac balances the requirements of commutation performance and gate sensitivity.
The "sensitive gate" "series E" is intended for interfacing with low power drivers including microcontrollers.
2.
Features and benefits • 3Q technology for improved noise immunity • Direct interfacing with low power drivers and microcontrollers • Good immunity to false turn-on by dV/dt • High commutation capability with sensitive gate • High voltage capability • Planar passivated for voltage ruggedness and reliability • Surface mountable package • Triggering in three quadrants only 3.
Applications • Electronic thermostats (heating and cooling) • High power motor controls e.
g.
washing machines and vacuum cleaners 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Absolute maximum rating VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current Tj junction temperature Symbol Parameter Static characteristics IGT gate trigger current Conditions full sine wave; Tmb ≤ 101 °C Fig.
1; Fig.
2; Fig.
3 full sine wave; Tj(init) = 25 °C; tp = 20 ms Fig.
4; Fig.
5 full sine wave; Tj(init) = 25 °C; tp = 16.
7 ms Conditions VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7 Values Unit 600 V 16 A 140 A 150 125 Min Typ A °C Max Unit - - 10 mA - - 10 mA WeEn Semiconductors BTA316B-600E 3Q Hi-Com Triac Symbol Parameter Static characteristics IGT gate trigger current IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating current Conditions VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7 VD = 12 V; Tj = 25 °C; Fig.
9 IT = 18 A; Tj = 25 °C; Fig.
10 VDM = 402 V; Tj = 125 °C; (VDM = 67%...


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