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BCV62


Part Number BCV62
Manufacturer Kexin
Title PNP general purpose double transistor
Description SMD Type MOSFET PNP general purpose double transistor BCV62 ■ Features ● High current gain ● Low collector-emitter saturation voltage 21 TR1 T...
Features
● High current gain
● Low collector-emitter saturation voltage 21 TR1 TR2 34 Unit: mm 1
■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Thermal resistance from junction to ambient Operating and...

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BCV61 : NPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number BCV61 BCV61A BCV61B BCV61C Package NXP SOT143B JEITA - PNP complement BCV62 BCV62A BCV62B BCV62C 1.2 Features „ Low current (max. 100 mA) „ Low voltage (max. 30 V) „ Matched pairs 1.3 Applications „ Applications with working point independent of temperature „ Current mirrors 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Description collector TR2; base TR1 and TR2 collector TR1 emitter TR1 emitter TR2 Simplified outline Graphic symbol 43 43 12 TR2 TR1 12 006aaa842 NXP Semiconductors BCV61 NPN general-purpose double transistors 3. .

BCV61 : NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage q BCV 61 Type BCV 61 A BCV 61 B BCV 61 C Marking 1Js 1Ks 1Ls Ordering Code (tape and reel) Q62702-C2155 Q62702-C2156 Q62702-C2157 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage Collector current Collector peak current Base peak current (transistor T1) Total power dissipation, TS ≤ 99 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - .

BCV61 : NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCV61 3 4 2 1 C1 (2) C2 (1) Tr.1 Tr.2 Type BCV61B BCV61C Marking 1Ks 1Ls E1 (3) E2 (4) EHA00012 1 = C2 1 = C2 Pin Configuration 2 = C1 3 = E1 4 = E2 2 = C1 3 = E1 4 = E2 Package SOT143 SOT143 Maximum Ratings Parameter Collector-emitter voltage (transistor T1) Symbol VCEO Value 30 Collector-base voltage (open emitter) (transistor T1) VCBO 30 Emitter-base voltage DC collector current Peak collector current, tp 10 ms Base peak current (transist.

BCV61 : NPN double transistor in a SOT143B plastic package. PNP complement: BCV62. PINNING PIN 1 2 3 4 DESCRIPTION collector TR2; base TR1 and TR2 collector TR1 emitter TR1 emitter TR2 handbook, halfpag4e 3 21 TR1 TR2 MARKING TYPE NUMBER BCV61 BCV61A MARKING CODE 1Mp 1Jp TYPE NUMBER BCV61B BCV61C MARKING CODE 1Kp 1Lp 1 Top view 2 3 MAM293 4 Fig.1 Simplified outline (SOT143B) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBS IC ICM IBM Ptot Tstg Tj Tamb P.

BCV61A : NPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number BCV61 BCV61A BCV61B BCV61C Package NXP SOT143B JEITA - PNP complement BCV62 BCV62A BCV62B BCV62C 1.2 Features „ Low current (max. 100 mA) „ Low voltage (max. 30 V) „ Matched pairs 1.3 Applications „ Applications with working point independent of temperature „ Current mirrors 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Description collector TR2; base TR1 and TR2 collector TR1 emitter TR1 emitter TR2 Simplified outline Graphic symbol 43 43 12 TR2 TR1 12 006aaa842 NXP Semiconductors BCV61 NPN general-purpose double transistors 3. .

BCV61A : NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage q BCV 61 Type BCV 61 A BCV 61 B BCV 61 C Marking 1Js 1Ks 1Ls Ordering Code (tape and reel) Q62702-C2155 Q62702-C2156 Q62702-C2157 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage Collector current Collector peak current Base peak current (transistor T1) Total power dissipation, TS ≤ 99 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - .

BCV61A : BCV61 NPN Silicon Double Transistor  To be used as a current mirror  Good thermal coupling and VBE matching  High current gain  Low collector-emitter saturation voltage C1 (2) C2 (1) 3 4 2 1 Tr.1 Tr.2 VPS05178 E1 (3) E2 (4) EHA00012 Type BCV61A BCV61B BCV61C Maximum Ratings Parameter Marking 1Js 1Ks 1Ls 1 = C2 1 = C2 1 = C2 Pin Configuration 2 = C1 2 = C1 2 = C1 3 = E1 3 = E1 3 = E1 4 = E2 4 = E2 4 = E2 Package SOT143 SOT143 SOT143 Symbol VCEO VCBO VEBS IC ICM IBM Ptot Tj Tstg Value 30 30 6 100 200 200 300 150 -65 ... 150 Unit V Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage DC collector current Peak collec.

BCV61B : NPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number BCV61 BCV61A BCV61B BCV61C Package NXP SOT143B JEITA - PNP complement BCV62 BCV62A BCV62B BCV62C 1.2 Features „ Low current (max. 100 mA) „ Low voltage (max. 30 V) „ Matched pairs 1.3 Applications „ Applications with working point independent of temperature „ Current mirrors 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Description collector TR2; base TR1 and TR2 collector TR1 emitter TR1 emitter TR2 Simplified outline Graphic symbol 43 43 12 TR2 TR1 12 006aaa842 NXP Semiconductors BCV61 NPN general-purpose double transistors 3. .

BCV61B : NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage q BCV 61 Type BCV 61 A BCV 61 B BCV 61 C Marking 1Js 1Ks 1Ls Ordering Code (tape and reel) Q62702-C2155 Q62702-C2156 Q62702-C2157 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage Collector current Collector peak current Base peak current (transistor T1) Total power dissipation, TS ≤ 99 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - .

BCV61B : NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCV61 3 4 2 1 C1 (2) C2 (1) Tr.1 Tr.2 Type BCV61B BCV61C Marking 1Ks 1Ls E1 (3) E2 (4) EHA00012 1 = C2 1 = C2 Pin Configuration 2 = C1 3 = E1 4 = E2 2 = C1 3 = E1 4 = E2 Package SOT143 SOT143 Maximum Ratings Parameter Collector-emitter voltage (transistor T1) Symbol VCEO Value 30 Collector-base voltage (open emitter) (transistor T1) VCBO 30 Emitter-base voltage DC collector current Peak collector current, tp 10 ms Base peak current (transist.

BCV61C : NPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number BCV61 BCV61A BCV61B BCV61C Package NXP SOT143B JEITA - PNP complement BCV62 BCV62A BCV62B BCV62C 1.2 Features „ Low current (max. 100 mA) „ Low voltage (max. 30 V) „ Matched pairs 1.3 Applications „ Applications with working point independent of temperature „ Current mirrors 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Description collector TR2; base TR1 and TR2 collector TR1 emitter TR1 emitter TR2 Simplified outline Graphic symbol 43 43 12 TR2 TR1 12 006aaa842 NXP Semiconductors BCV61 NPN general-purpose double transistors 3. .

BCV61C : NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage q BCV 61 Type BCV 61 A BCV 61 B BCV 61 C Marking 1Js 1Ks 1Ls Ordering Code (tape and reel) Q62702-C2155 Q62702-C2156 Q62702-C2157 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage Collector current Collector peak current Base peak current (transistor T1) Total power dissipation, TS ≤ 99 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - .

BCV61C : NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCV61 3 4 2 1 C1 (2) C2 (1) Tr.1 Tr.2 Type BCV61B BCV61C Marking 1Ks 1Ls E1 (3) E2 (4) EHA00012 1 = C2 1 = C2 Pin Configuration 2 = C1 3 = E1 4 = E2 2 = C1 3 = E1 4 = E2 Package SOT143 SOT143 Maximum Ratings Parameter Collector-emitter voltage (transistor T1) Symbol VCEO Value 30 Collector-base voltage (open emitter) (transistor T1) VCBO 30 Emitter-base voltage DC collector current Peak collector current, tp 10 ms Base peak current (transist.

BCV62 : PNP general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number BCV62 BCV62A BCV62B BCV62C Package NXP SOT143B JEITA - NPN complement BCV61 BCV61A BCV61B BCV61C 1.2 Features and benefits „ Low current (max. 100 mA) „ Low voltage (max. 30 V) „ Matched pairs „ AEC-Q101 qualified „ Small SMD plastic package 1.3 Applications „ Applications with working point independent of temperature „ Current mirrors 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VCEO collector-emitter voltage IC collector current Transistor TR1 open base - - −30 V .

BCV62 : PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage q BCV 62 Type BCV 62 A BCV 62 B BCV 62 C Marking 3Js 3Ks 3Ls Ordering Code (tape and reel) Q62702-C2158 Q62702-C2159 Q62702-C2160 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage Collector current Collector peak current Base peak current (transistor T1) Total power dissipation, TS = 99 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - .

BCV62 : BCV62 PNP Silicon Double Transistor  To be used as a current mirror  Good thermal coupling and VBE matching  High current gain  Low collector-emitter saturation voltage C1 (2) C2 (1) 3 4 2 1 Tr.1 Tr.2 VPS05178 E1 (3) E2 (4) EHA00013 Type BCV62A BCV62B BCV62C Maximum Ratings Parameter Marking 3Js 3Ks 3Ls 1 = C2 1 = C2 1 = C2 Pin Configuration 2 = C1 2 = C1 2 = C1 3 = E1 3 = E1 3 = E1 4 = E2 4 = E2 4 = E2 Package SOT143 SOT143 SOT143 Symbol VCEO VCBO VEBS IC ICM IBM Ptot Tj Tstg Value 30 30 6 100 200 200 300 150 -65 ... 150 Unit V Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage DC collector current Peak collec.




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