DatasheetsPDF.com

MTB06N03E3

CYStech
Part Number MTB06N03E3
Manufacturer CYStech
Description N-Channel Enhancement Mode Power MOSFET
Published Mar 11, 2020
Detailed Description CYStech Electronics Corp. Spec. No. : C441E3 Issued Date : 2010.08.13 Revised Date : 2019.07.31 Page No. : 1/8 N-Chann...
Datasheet PDF File MTB06N03E3 PDF File

MTB06N03E3
MTB06N03E3

Overview
CYStech Electronics Corp.
Spec.
No.
: C441E3 Issued Date : 2010.
08.
13 Revised Date : 2019.
07.
31 Page No.
: 1/8 N-Channel Enhancement Mode Power MOSFET MTB06N03E3 BVDSS ID @VGS=10V, TC=25C VGS=10V, ID=30A RDSON(TYP) VGS=4.
5V, ID=24A 30V 102A 4 mΩ 5 mΩ Features  Simple Drive Requirement  Fast Switching Characteristic  Pb-free lead plating and RoHS compliant package Symbol MTB06N03E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTB06N03E3-0-UB-X Package TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTB06N03E3 CYStek Product Specification CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current @VGS=10V, TC=25C Continuous Drain Current @VGS=10V, TC=100C ID Pulsed Drain Current IDM Avalanche Current @ L=0.
1mH IAS Avalanche Energy L=2mH, ID=16A, VDD=25V * 2 EAS Repetitive Avalanche Energy Total Power Dissipation L=0.
05mH TC=25°C TC=100°C EAR PD Operating Junction and Storage Temperature Tj, Tstg Note : *1.
Pulse width limited by maximum junction temperature.
*2.
100% tested by conditions of L=0.
1mH, ID=16A, VGS=10V, VDD=15V Spec.
No.
: C441E3 Issued Date : 2010.
08.
13 Revised Date : 2019.
07.
31 Page No.
: 2/8 Limits 30 ±20 102 72 408 *1 40 256 25 94 47 -55~+175 Unit V A mJ W C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Value 1.
6 62.
5 Unit C/W Characteristics (Tj=25C, unless otherwise specified) Symbol Min.
Typ.
Max.
Unit Test Conditions Static BVDSS VGS(th) IGSS 30 1- 3 V VGS=0V, ID=250μA VDS = VGS, ID=250μA - - ±100 nA VGS=±20V, VDS=0V IDSS *RDS(ON) *G...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)