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MTB06N03Q8

Cystech Electonics
Part Number MTB06N03Q8
Manufacturer Cystech Electonics
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Published Mar 9, 2010
Detailed Description CYStech Electronics Corp. Spec. No. : C441Q8 Issued Date : 2009.05.07 Revised Date : 2020.01.13 Page No. : 1/9 N-Chann...
Datasheet PDF File MTB06N03Q8 PDF File

MTB06N03Q8
MTB06N03Q8

Overview
CYStech Electronics Corp.
Spec.
No.
: C441Q8 Issued Date : 2009.
05.
07 Revised Date : 2020.
01.
13 Page No.
: 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB06N03Q8 BVDSS ID@VGS=10V, TC=25C RDSON@VGS=10V, ID=18A RDSON@VGS=4.
5V, ID=12A 30V 23A 4.
6mΩ(typ) 6.
5mΩ(typ) Features  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Repetitive Avalanche Rated  Pb-free lead plating package Symbol MTB06N03Q8 Outline D D SOP-8 D D G：Gate D：Drain S：Source Pin 1 G S S S Ordering Information Device Package MTB06N03Q8-0-T3-G SOP-8 (Pb-free lead plating and halogen-free package) MTB06N03Q8-0-TF-G SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs/ Tape & Reel 4000 pcs/ Tape & Reel MTB06N03Q8 Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel,13” reel, TF : 4000 pcs/tape & reel, 13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C441Q8 Issued Date : 2009.
05.
07 Revised Date : 2020.
01.
13 Page No.
: 2/9 Absolute Maximum Ratings (Ta=25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25C Continuous Drain Current @VGS=10V,TC=100C Continuous Drain Current @VGS=10V,TA=25C Continuous Drain Current @VGS=10V,TA=100C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.
1mH, ID=16A, RG=25Ω Repetitive Avalanche Energy @ L=0.
05mH Total Power Dissipation TA=25℃ TA=100℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IAS EAS EAR PD Tj, Tstg Limits 30 ±20 23 14 16 10 92 *1 16 12.
8 3 *2 2.
5 1.
5 -55~+150 Unit V A mJ W C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Rth,j-c Rth,j-a 25 50 *3 C/W Note : 1.
Pulse width limited by maximum junction temperature 2.
...


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